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| 2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V(TYE) *Fast Switching Speed : 7ns 1 GATE 2 SOURCE 1 2 SOT-323(SC-70) Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID PD R JA TJ, Tstg Value 60 20 115 200 625 -55 to 150 Unit V V mA mW C/W C Device Marking 2N7002W=K72 WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=V GS , ID =-250uA Gate-body Leakage + VGS= _ 20V, VDS=0V Zero Gate Voltage Drain Current VDS=60V, VGS=0V @ Tc=25 C VDS=60V, VGS=0V @ Tc=125 C On-State Drain Current VGS=10V, VDS=7.5V Drain-Source On-Resistance VGS=5V, ID=0.05A @ Tj=25 C VGS=10V, ID=0.5A @ Tj =125 C Forward Transconductance VDS=10V, ID=0.2A V(BR)DSS VGS (th) IGSS IDSS ID (on) 60 1.0 70 1.5 1.0 3.2 4.4 2.0 +10 _ 1.0 500 V V nA uA A 0.5 RDS (on) gfs 80 7.5 13.5 - - mS Dynamic Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss - 22 11 2.0 50 25 5.0 PF Switching Turn-On Time VDD=30V, RL=150 ,ID=0.2A VGEN=10V, RGEN=25 Turn-Off Time VDD=30V, RL=150 , ID=0.2A VGEN=10V, RGEN=25 td(on) - 7.0 20 ns td(off ) - 11 20 ns Note: _ _ 1. Pulse Test: pulse width < 300us, duty cycle < 2% WEITRON http://www.weitron.com.tw 2N7002W 2.0 1.8 I D ,DRIAN CURRENT(A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 7V 6V 5V 4V 3V 9.0 10 Ta =25 C VGS=10V I D ,DRIAN CURRENT(A) 9V 8V 1.0 VGS=10V 0.8 -55 C 125 C 25 C 0.6 0.4 0.2 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VDS ,DRAIN SOURCE VOLTAGE(V) VGS ,GATE SOURCE VOLTAGE(V) FIG.1 Ohmic Region FIG.2 Transfer Characteristics IDS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2.0 1.8 (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 60 - 20 + 20 + 60 + 100 + 140 VGS=10V ID =200mA VGS(th) ,THRESHOLD VOLTAGE (NORMZLIZED) 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 - 60 - 20 + 20 + 60 + 100 + 140 VDS=VGS ID =1.0mA T ,TEMPERATURE( C) T ,TEMPERATURE( C) FIG.3 Temperature Versus Static Drain-Source On-Resistance FIG.4 Temperature Versus Gate Threshold Voltage WEITRON http://www.weitron.com.tw 2N7002W SOT-323 Outline Demensions Unit:mm A SOT-323 B C T OP V IE W D E G H K L J M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON http://www.weitron.com.tw |
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